3 edition of Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films found in the catalog.
Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films
1990 by National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, For sale by the National Technical Information Service in [Washington, D.C.], Springfield, Va .
Written in English
|Statement||Pierre A. Steinmann and Talivaldis Spalvins.|
|Series||NASA technical paper -- 2994.|
|Contributions||Spalvins, Talivaldis., Lewis Research Center., United States. National Aeronautics and Space Administration. Scientific and Technical Information Division.|
|The Physical Object|
Abstract Thin films of titaniumdioxide (TiO2) are important high refractive index coatings in opticalmultilayer stacks. Especiallyinteresting is the rutile crystalline phase of TiO2 films because it's refractive index in the range of is the highest available refractive index ofmaterials being transparent in the visible and near infrared wavelengthregion. Abstract Highly crystalline thin films of MoS 2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al 2 O 3 (), GaN (), and SiC-6H () substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. The method of pulsed laser deposition (PLD) is intensively used in material research, as well as the industry, for developing thin ﬁlms and coatings of special materials, such as: ferroelectrics, superconductors, oxides, polymers, complex hy-brid metal-organics, etc. This simple, yet versatile thin ﬁlm deposition method can. AlN films which have been grown by various techniques, chemical-vapor atomic-layer deposition (a special type of CVD) , metal organic CVD , molecular beam epi- taxy , ion beam enhanced deposition (electron beam evaporation of Al combined with N ion bombardment) , reactive radio-frequency (RF) magnetron sputteringFile Size: KB.
depositions under these conditions have the problem of a slow deposition rate because the diﬀusion coeﬃcient of Si precursors in the gas phase decreases with increasing total gas pressure. In addition, we measured the Si and H atom densities in rf magnetron sputtering plasmas with a Si target and the H 2/Ar.
Sarah Louisa Kilpack, 1839-1909.
Cuzzart quadrangle, West Virginia--Preston Co., 1997
150th anniversary, 1844-1994.
How I found Livingstone
New deans of students: old problems, new answers
History of Beaver County schools
NCVO fundraising consultants listing for voluntary organisations
Only by public consent
So many books, so little time
The treatment of uitkomst concentrate
report on the criminal courts of San Francisco.
Geochemical prospecting abstracts through June 1952
Cerenkov radiation from periodic electron bunches for finite emission length in air
Logic Pro 9 and Logic Express 9
Sputtered MoS 2 films on the sputtering parameters selected (refs. 1 to 7). However, many contradictory results are reported in the literature. Therefore, the purpose of this study is to vary deposition parameters to produce films of various properties and then identify those properties (and, thus, the deposition conditions) that are desirable.
Get this from a library. Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films. [Pierre A Steinmann; Talivaldis Spalvins; Lewis Research Center.; United States.
National Aeronautics and Space Administration. Scientific. The RF-magnetron sputter deposited HA films at the applied deposition conditions were found to grow with a columnar structure that was independent of the sample position.
According to the XRD, crystalline films were obtained. The lines of the diffraction peaks correspond to hexagonal HA (JCPDS card file # ) and titanium (#).Cited by: Deposition temperature effect of RF magnetron sputtered molybdenum oxide films on the power conversion efficiency of bulk-heterojunction solar cells To cite this article: Xi Fan et al J.
Phys. D: Appl. Phys. 44 View the article online for updates and enhancements. Related content Efficient flexible organic solar cells with.
Deposition temperature effect of RF magnetron sputtered molybdenum oxide films on the Please note that terms and conditions apply.
Before deposition, the target was pre-sputtered for 10min to remove some possible contaminants. The MoO. Molybdeum disulfide (MoS2) is a widely used solid lubricant material for space and bearing applications.
In this study, the deposition of MoS2 thin. BaSrTiO3 (BST) thin films have been deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and field emission scanning electron microscopy, respectively.
The crystallization behavior of these films was apparently Cited by: 5. In present work, MoS2/a-C composite films were synthesized by r.f. sputtering of MoS2 and graphite targets, and the influence of C dopant on the structure, morphology, mechanical and the.
In this context, Mo films on SLG substrates were prepared as a function of deposition pressure and power by using RF magnetron sputtering method to contribute to this shortcoming.
Mo films were deposited at °C substrate temperature by us 15, 10 mTorr Ar pressures at W RF power and 10 mTorr Ar pressure at W RF by: 5.
Therefore, this study investigated the influence of sputtering power as well as deposition pressure on optical properties of tungsten oxide thin films.
MATERIALS AND METHODS Tungsten oxide films were prepared USIQgEdwards Auto Magnetron Sputtering System by reactive de method, from a % pure metallic tungsten target.
TiO2 films were prepared using radio frequency (RF) magnetron sputtering and were deposited on glass and Si substrates. We varied deposition time at room temperature with RF density of W/cm2 and argon flow rate of 4 sccm.
The morphological, structural, optical and electrical properties were studied by Atomic Force Microscope (AFM), X ray Diffractometer (XRD) and Author: F. Chaabouni, Luís Cadillon Costa, Mabrouk Selmi, Mohamed Abaab, Bahri Rezig.
Influence of terbium (Tb) doping on structural, optical and morphological properties of radio frequency magnetron-sputtered ZnO films has been investigated using various characterization techniques. Investigations revealed the formation of hexagonal wurtzite structure of ZnO with preferential c-axis orientation, presence of oxygen vacancies, modification of Cited by: Cr 2 O 3 thin films were deposited by radio-frequency reactive magnetron sputtering at substrate temperature in the range – K.
The hardness and elastic modulus of the films were measured by two complementary nanoindentation techniques to investigate the influences of the substrate temperature and the oxygen content in the sputtering by: RF Magnetron sputtering uses magnets behind the negative cathode to trap electrons over the negatively charged target material so they are not free to bombard the substrate, allowing for faster deposition rates.
Over time, positive ions are produced which accumulate on the surface of the target face giving it a positive charge. Thin Film Growth Through Sputtering Technique and Its Applications Edgar Alfonso, Jairo Olaya and Gloria Cubillos Universidad Nacional de Colombia Colombia 1.
Introduction During the last decade the dc and rf sputteri ng techniques have been used extensively in their two configurations balanced and unbalanced magnetron. The main applications. influence on the charge carrier density of the films.
High Al concentrations of 10 20 and 10 20 cm -3 are obtained at increased sputtering temperature (°C) and reduced oxygen flow (6 sccm), respectively, allowing charge carrier.
cients of friction for the sputtered films were in agreement with the reported values in the literature. Stoichiometric films were obtained, and no dissociation was observed. There is a strong bonding (adherence) between the films and the substrate, as indicated by the long-endurance life of the lubricating films in friction experiments.
The File Size: KB. Superficies y Vacío 27(1)marzo de ©Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales 16 Figure 1. Thickness of rf-sputtered CdTe films as a function of deposition time. of the vacuum chamber was 2x Torr, and the substrate.
Buy Deposition & Characterization of Molybdenum Thin Films: using DC-Plasma Magnetron Sputtering for Back Contact Application in CIGS based Thin Films Solar Cells on FREE SHIPPING on qualified ordersAuthor: Majid Khan.
Influence of deposition pressure on N-doped ZnO films by RF magnetron sputtering. Wang J(1), Elamurugu E, Franco N, Alves E, Botelho do Rego AM, Gonçalves G, Martins R, Fortunato E. Author information: (1)Material Science Department, CENIMAT/13N and CEMOP/UNINOVA, FCT-UNL, Campus de Caparica, Caparica, by: 2.
ZnO thin films were prepared on glass substrates by radio frequency co-reactive magnetron sputtering at different deposition time of 20, 40, 60 and 80 min. Surface morphologies and crystal structures were examined using atomic force microscopy and X-ray diffraction.
As the deposition time increased to 60 min, surface morphologies of the films became smooth and distributed Cited by: 1. Molybdenum oxide films were deposited on glass and single crystal silicon substrates held at room temperature by sputtering of molybdenum target in an oxygen partial pressure of 2×l0−4 mbar.
The MoO3 films were annealed in oxygen atmosphere at various temperatures in the range – K. The effect of annealing temperature on the structure, Author: V. Nirupama, M. Chandra Sekhar, P. Sreedhara Reddy, O. Hussain, S.
Uthanna. Crystallization of Molybdenum Disulfide Films Deposited by Pulsed Laser Ablation - Volume - J. Zabinski, M. Donley, P. John, V. Dyhouse, A. Safriet Cited by: However, if the sputtered species reaching the film surface is uniform in size and energy, then an optimal structure (e.g., an epitaxial film) forms, even at low deposition temperatures, if the Cited by: A high deposition rate is important to the low-cost production of these ﬁlms.
The highest deposition rate achieved was nm/min, allowing thick (2 µm or more) ﬁlms to be deposited within a few hours.
The effect of deposition conditions on the ZnO crystallite size was also studied. Higher RF power resulted in larger crystallite sizes. The films annealed at °C for 1 h showed a pure α phase and their texture was dependent on the ambient pressure during the initial sputtering deposition. The films sputtered under 3 mTorr were b-axis oriented with a broad in-plane alignment after annealing, while the films sputtered under higher pressures showed a texture with the Mo-O 6 Cited by: Available in the National Library of Australia collection.
Author: Steinmann, Matthias Friedrich; Format: Book; p.: plates ; 22 cm. (MBE) , pulsed laser deposition (PLD)  and electron shower method . Recently, many reports on low temperature deposition of good quality AlN films by physical vapour deposition (PVD) techniques are available.
In the PVD process DC reactive magnetron sputtering is the most common deposition process. We report a preliminary survey of the effects of dc substrate bias and residual gas contamination on the average composition, internal stress, electrical conductivity, and crystal structure of molybdenum films deposited by rf sputtering.
We find strong interrelations among all these parameters. Thus films sputtered in residual pressure approximately 10−5 Torr exhibit stress Cited by: Deposition and Characterization of Tialn Thin Film 19 Using Dc/Rf Magnetron Co-Sputtering Technique Where P is the applied load in Kg and d is in mm.
Table 5. Hardness Results Sample No. RF Power Hardness (GPa) Modulus of Elasticity (GPa) Young Modulus (GPa). An examination of the latest materials and applications in pulsed laser deposition. Following up on the book Pulsed Laser Deposition of Thin Films, this current version summarizes the state of the technology in pulsed laser deposition (PLD) techniques, new materials that have been grown, and their : Robert Eason.
1 Influence of La and Mn vacancies on the electronic and magnetic properties of LaMnO3 thin films grown by pulsed laser deposition Ivan Marozau1, Proloy T.
Das1,2, Max Döbeli3, James G. Storey4, Miguel A. Uribe-Laverde1, Saikat Das1, Chennan Wang1, Matthias Rössle1, Christian Bernhard1* 1 Department of Physics and Fribourg Center for Nanomaterials - Frimat, Cited by: The radiofrequency magnetron co-sputtering deposition technique provides effective synthesis protocols for the preparation of both amorphous and crystalline Er-doped alumina thin films.
The reported study is the first step towards the fabrication of a waveguiding structure. In this study, the Er-doped crystalline alumina films were grown.
Highly crystalline thin films of MoS 2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al 2 O 3 (), GaN (), and SiC-6H () substrates.
X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline Cited by: Influence of deposition parameters on pulsed laser deposition of K MoO 3 thin films.
Đekić M.*, Salčinović Fetić A., Hrvat K., Lozančić M. Faculty of Science, Zmaja od Bo Sarajevo, Bosnia and Herzegovina. Abstract: INTRODUCTION. Metals with a chain-like structure which are highly anisotropic and therefore can be considered as.
Deposition-Temperature Eﬀects on AZO Thin Films Prepared by RF Magnetron – Jeung Hun Park et al. -SFig. (a) X-ray diﬀraction patterns for AZO thin ﬁlms at diﬀerent deposition temperatures, and (b) temperature eﬀects on the full width File Size: KB. We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates.
In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field Cited by: Influence of PO2 on the Properties of ITO Films at Room Temperature ITO films with different oxygen partial pressure ratio (PO2: from 27% to 0) were prepared with a sputtering atmosphere of x Pa total pressure (P T).
In Table an overview of the results is shown. Table Deposition conditions and parameters of ITO films Samp. ECS Journal of Solid State Science and Technology, 3 (6) NN94 () N89 Physical Analysis of VO 2 Films Grown by Atomic Layer Deposition and RF Magnetron Sputtering Madhavi Tangirala, a,b,∗Kai Zhang, ∗∗ David Nminibapiel, Venkateswara Pallem,c Christian Dussarrat,c Wei Cao,a,b Thomas N.
Adam, dCorbet S. Johnson, Hani E. Elsayed-Ali,a,b and Helmut. However, the deposition rate is 80% higher than at rf fre-quency of MHz. The quality of the ﬁlms has been found to be independent of the frequency and stoichiometric ﬁlms can be obtained using 75 kHz pulsed dc source.
Large area deposition of aluminum nitride ~up to 8 inch diameter wafers. is considered to be an advantage in magnetron File Size: KB. NiOx films were deposited with radio frequency (rf) magnetron sputtering at various sputtering powers (25–W) and deposition temperatures (room temperature to °C) using NiO target and pure O2 as a sputtering gas.
Crystallinity, bonding state (Ni+3 and Ni+2), work function, and the resistivity of the film were measured and the performance of the pentacene thin film Cited by: A mono- to multilayer thick MoS 2 film has been grown by using the atomic layer deposition (ALD) technique at °C on a sapphire wafer.
ALD provides precise control of the MoS 2 film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl 5 and H 2 S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity .SPIE Digital Library Proceedings. 29 August Deposition of Er 3+:Al 2 O 3 films by closed-field unbalanced magnetron sputtering and photoluminescence characterization of the filmsCited by: 1.